Thin Film Deposition

In the thin-film laboratory of the OUT e.V., contact and insulator layers for applications in microelectronics and optics can be deposited by means of vacuum coating. Our technical equipment allows:

Magnetron Sputtering PRISM

o Prevac PRISM system
o
DC, 13.56 and 27.12 MHz excitation
o
Reactive deposition with oxygen and nitrogen
o
Co-sputtering with 3 x 2-inch sources possible
o
Process chamber diameter 355 mm

Magnetron Sputtering Z400

o Plant Leybold Z400
o DC and 13.56 MHz excitation
o Reactive deposition with oxygen and nitrogen
o 3 x 75 mm targets can be swiveled over sample
o In situ cleaning of the sample by means of diode plasma
o Maximum substrate size 3″ diameter
o Max. substrate thickness for load lock use approx. 8 mm

Available target materials

o Metals:
Ag, Al, Au, Au:Be, Au:Ge, Bi, C, Co, Cr, Cr:Ni (50 wt%), Cu, Fe, Ge, In, In:Sn (10 wt%), Mn, Mg, Mo, MoSi2, Nb, Ni, Ni:Cr (20 at%), Ni:V, Pb, Pd, Pt, Ru, Si, Sn, Sn:Sb (6 wt%), Sn:Sb (12 wt%), Ti, Ti:Nb (2 und 6 wt%), Ti:Ta (10 wt%), Ti:V (3 wt%), Ti:Zr (6 wt%), TiSi2, V, W, W:Ti, Zn, Zn:Al (2 wt%), Zr:Y

o Oxides:
Al2O3, In2O3, In2O3:Cer (3 wt%), In2O3:Cu (5 wt%), In2O3:Mo (3 wt%), In2O3:Pd (3 wt%), In2O3:ZrO2, ITO (90/10 at%), SiO2, SnO2, SnOx:Ta, TiO2, TiO2:Nb (2 und 6 at%), VOx, ZnO, ZrO2

o Nitrides:
AlN, BN, Si3N4